CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1858I3
Spec.
No.
: C856I3 Issued Date : 2006.
06.
21 Revised Date : 2017.
05.
17 Page No.
: 1/7
Description
• High BVCEO • High current capability • Pb-free lead plating package
Symbol
BTD1858I3
Outline
TO-251AB
TO-251S
B：Base C：Collector E：Emitter
B CE
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : Single Pulse , Pw≦380μs,Duty...