CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD2118T3
Spec.
No.
: C847T3 Issued Date : 2007.
06.
26 Revised Date : Page No.
: 1/5
Description
• High BVCEO • High current capability • Pb-free package
Symbol
BTD2118T3
Outline
TO-126
B：Base C：Collector E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : Single Pulse , Pw≦380μs,Duty≦2%.
BTD2118T3
Symbol
VCBO VCEO VEBO
IC...