CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec.
No.
: C848E3 Issued Date : 2004.
07.
06 Revised Date : Page No.
: 1/5
BTD2150AE3
Features
• Low VCE(sat), VCE(sat)=0.
25 V (typical), at IC / IB = 2A / 50mA • Excellent current gain characteristics www.
DataSheet4U.
com • Complementary to BTB1424AE3
Symbol
BTD2150AE3
Outline
TO-220AB
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature
Note : Pulse test, pulse width≤38...