CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD6055J3
Spec.
No.
: C659J3 Issued Date : 2008.
06.
25 Revised Date : Page No.
: 1/6
Features
• Low VCE(SAT) • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A
• Low operating collector
voltage • Excellent current gain characteristics at very low VCE • Suitable for low dropout
voltage application • Pb-free package
Symbol
BTD6055J3
Outline
TO-252
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junct...