CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD882I3
BVCEO IC RCESAT
Spec.
No.
: C848I3-H Issued Date : 2003.
04.
02 Revised Date : 2010.
11.
05 Page No.
: 1/6
30V 3A 125mΩ typ.
Features
• Low VCE(sat), typically 0.
25V at IC / IB = 2A / 0.
2A • Excellent current gain characteristics • Complementary to BTB772I3 • RoHS compliant package
Symbol
BTD882I3
Outline
TO-251
B：Base C：Collector E：Emitter
BB CC E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage
Collector Current
Power Dissipation
Junction Temperature Storage Temperature
Note : *1.
Single Pulse Pw≦350μs,Duty≦2%.
Symbol
VCBO VCEO VEBO IC(DC) ...