CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTN5551K3
Spec.
No.
: C208K3 Issued Date : 2012.
06.
28 Revised Date : 2012.
10.
02 Page No.
: 1/6
Features
• High breakdown
voltage, BVCEO≥ 160V • Pb-free lead plating package
Symbol
BTN5551K3
Outline
TO-92L
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (pulse) Base Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range
Note : Pulse test, pulse width≤300μs, duty cycle≤2%
Symbol
VCBO VCEO VEBO
IC ICP IB PD
RθJA
Tj ; Tstg...