CYStech Electronics Corp.
www.
DataSheet4U.
com
Spec.
No.
: C231A3 Issued Date : 2003.
04.
12 Revised Date : Page No.
: 1/4
High
Voltage NPN Epitaxial Planar Transistor
BTN6517A3
Features
• High Breakdown
Voltage:BVCEO≥350V • Complementary to BTP6520A3
Symbol
BTN6517A3 TO-92
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current---continuous Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 350 350 6 500 625 150 -55~+150 Unit V V V mA mW °C °C
BTN6517A3
CYStek Product Specification
CYStech Electronics Corp.
www.
DataSheet4U...