CYStech Electronics Corp.
NPN High
Voltage Planar Transistor
BTNA45N3
BVCEO IC VCESAT
Spec.
No.
: C241N3 Issued Date : 2011.
06.
10 Revised Date : 2017.
05.
15 Page No.
: 1/7
500V 150mA 150mV (max)
Features
• High breakdown
voltage.
(BVCEO=500V) • Low collector-emitter saturation
voltage VCESAT.
• High collector current capability IC and ICM.
• High collector current gain HFE at high collector current IC.
• Low collector output capacitance.
(Typ.
5pF at VCB =20V) • Pb-free lead plating and halogen-free package.
Symbol
BTNA45N3
Outline
SOT-23 C
BE
Ordering Information
Device BTNA45N3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
...