isc Silicon NPN Power Transistor
BU1508DX
DESCRIPTION ·High
Voltage ·High Speed Switching ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Base
Voltage VBE= 0
1500
V
VCEO Collector-Emitter
Voltage
700
V
VEBO
Emitter-Base
Voltage
7.
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
4
A
IBM
Base Current-peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
6
A
35
W
150
℃
...