isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Base Breakdown
Voltage-
: V(BR)CBO= 525V (Min) ·High Current Capability ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·General purpose power
amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base
Voltage
525
V
VCEO
Collector-Emitter
Voltage
475
V
VEBO
Emitter-Base
Voltage
8
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
2
A
75
W
150
℃
Tstg
Storage Temperature Range
...