Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2506DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-
voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Total power di...