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BU2507DX

Part Number BU2507DX
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 24, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode ·Minimum Lot-...
Datasheet BU2507DX




Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of coluor TV receivers and computer monitors.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.
5 V IC Collector Current-Continuous 8 A ICM Collector Current-peak 15 A IB Base Current-Continuous 4 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 6 A 45 W ...






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