Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2527A
GENERAL DESCRIPTION
New generation, high-
voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors.
Features improved RBSOA performance and is suitable for operation up to 64 kHz.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation
voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP.
6.
0...