Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2720DX
GENERAL DESCRIPTION
High
voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.
Intended for use in horizontal deflection circuits of colour television receivers.
Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter
voltage peak value Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation
voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP.
5.
5 7.
4 MAX.
...