isc Silicon NPN Power Transistor
DESCRIPTION ·High
Voltage: VCEV= 400V(Min) ·Fast Switching Speed-
: tf= 0.
5μs(Max) ·Low Saturation
Voltage-
: VCE(sat)= 1.
0V(Max)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base
Voltage
400
VCEV
Collector-Emitter
Voltage
400
VCEO
Collector-Emitter
Voltage
200
VEBO
Emitter-Base
Voltage
6
IC
Collector Current-Continuous
7
ICM
Collector Current-Peak
10
IB
Base Current
4
PC
Collector Power Dissipation @ TC=25℃
60
TJ
Junction Te...