isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO = 400V(Min.
) ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat) = 3.
3V(Max.
) @ IC= 8A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power supply units of TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1000
V
VCEO
Collector-Emitter
Voltage
400
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
15
A
100
W
150
℃
Tstg
Storage Temper...