DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ303B Silicon Diffused Power Transistor
Product specification
March 2002
NXP Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ303B
GENERAL DESCRIPTION
High-
voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf
PARAMETER
Collector-emitter
voltage peak value Collector-Base
voltage (open emitter) Collector-emitter
voltage (open base) Collector current (DC) Collector cur...