Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ304A
GENERAL DESCRIPTION
High-
voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFESAT tf PARAMETER Collector-emitter
voltage peak value Collector-Base
voltage (open emitter) Collector-emitter
voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation
voltage Fall time (Inductive) CONDITIONS VB...