Philips Semiconductors
Product specification
PowerMOS transistor TOPFET
DESCRIPTION
Monolithic temperature and overload protected power
MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.
BUK109-50GS
QUICK REFERENCE DATA
SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source
voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 10 V MAX.
50 29 75 150 50 UNIT V A W ˚C mΩ
APPLICATIONS
General controller for driving lamps motors solenoids heaters
FEATURES
Vertical power DMOS output stage Low on-state resistance Overload protecti...