Philips Semiconductors
Product specification
PowerMOS transistor
BUK436W-1000B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source
voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
1000 3.
1 125 5 UNIT V A W Ω
PINNING - SOT429 (TO247)
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
SYMBOL
d
g
1
2
3
s
LIMITING VALUES
Limiting values in ac...