Philips Semiconductors
Product Specification
PowerMOS transistor
BUK436W-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK436 Drain-source
voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
-200A 200 19 125 0.
16 MAX.
-200B 200 17 125 0.
2 UNIT V A W Ω
PINNING - SOT429 (TO247)
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
SYMBOL
d
g
1
2
3
...