Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-1000B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source
voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
1000 1.
5 30 5 UNIT V A W Ω
PINNING - SOT186
PIN 1 2 3 gate drain source DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
case isolated
1 2 3
s
LIMITING VALUES
Limiting value...