isc N-Channel
MOSFET Transistor
DESCRIPTION ·Drain Source
Voltage-
: VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
200
V
VGS
Gate-Source
Voltage
Drain
BUK454-200A
ID
Current-continuou
s@ TC=37℃
BUK454-200B
Ptot
Total Dissipation@TC=25℃
±30
V
9.
2 A
8.
2
90
W
Tj
Max.
Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
THERMAL CHAR...