Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK456 Drain-source
voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.
-60A 60 52 150 175 0.
028 MAX.
-60B 60 51 150 175 0.
03 UNIT V A W ˚C Ω
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
P...