Philips Semiconductors
Product specification
PowerMOS transistor Isolated version of BUK455-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
BUK475-200A/B
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK475 Drain-source
voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.
-200A 200 7.
6 30 150 0.
23 MAX.
-200B 200 7 30 150 0.
28 UNIT V A W ˚C Ω
PINNING - SOT186A
PIN 1 2 3 gate drain s...