Philips Semiconductors
Product Specification
PowerMOS transistor
BUK481-100A
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
The device is intended for use in automotive and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source
voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 10 V MAX.
100 1.
0 1.
5 150 0.
80 UNIT V A W ˚C Ω
PINNING - SOT223
PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION
PIN CONFIGURATION
4
SYMBOL
d
g
1
2
3
s
LIMITING VALUES
Limiting values in ac...