Philips Semiconductors
Product specification
PowerMOS transistor
BUK482-200A
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking
voltage, fast switching and high thermal cycling performance.
Intended for use in Switched Mode Power Supplies (SMPS) and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source
voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
200 2.
0 8.
3 0.
9 UNIT V A W Ω
PINNING - SOT223
PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION
PIN C...