Philips Semiconductors
Product Specification
PowerMOS transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
BUK543-100A/B
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK543 Drain-source
voltage Drain current (DC) Total power dissipation Drain-source on-state resistance; VGS = 5 V MAX.
-100A 100 8.
3 25 0.
18 MAX.
-100B 100 7.
5 25 0.
22 UNIT V A W Ω
PINNING - SOT186
PIN 1 2 3 gate drain source DESCRIPT...