Part Number
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BUK626R2-40C |
Manufacturer
|
NXP Semiconductors |
Description
|
N-channel TrenchMOS intermediate level FET |
Published
|
Aug 19, 2014 |
Detailed Description
|
DP AK
BUK626R2-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 12 July 2011 Product data sheet
1. Product prof...
|
Datasheet
|
BUK626R2-40C
|
Overview
DP AK
BUK626R2-40C
N-channel TrenchMOS intermediate level FET
Rev.
1 — 12 July 2011 Product data sheet
1.
Product profile
1.
1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits
AEC Q101 compliant Suitable for standard and logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.
3 Applications
12 V Automotive systems Electric and electro-hydraulic power steering Mo...
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