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Part Number
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BUK652R1-30C |
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Manufacturer
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NXP |
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Description
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N-channel TrenchMOS intermediate level FET |
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Published
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Aug 19, 2010 |
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Detailed Description
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www.DataSheet4U.com
BUK652R1-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 5 July 2010 Objective data sheet
...
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Datasheet
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BUK652R1-30C
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Overview
www.
DataSheet4U.
com
BUK652R1-30C
N-channel TrenchMOS intermediate level FET
Rev.
01 — 5 July 2010 Objective data sheet
1.
Product profile
1.
1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits
AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.
3 Applications
12 V Automotive systems HVAC Motors, lamps and solenoid contro...
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