BUK6D77-60E
60 V, N-channel Trench
MOSFET
4 April 2019
Product data sheet
1.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2.
Features and benefits
• Extended temperature range Tj = 175 °C • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection 2 kV HBM (class H2) • Trench
MOSFET technology • AEC-Q101 qualified
3.
Applications
• Relay driver • High-speed line driver • Low-side load switch • Switching circuits
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDS drain-source ...