Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting.
Using ’trench’ technology the device features very low on-state resistance.
It is intended for use in automotive and general purpose switching applications.
BUK7615-100A
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source
voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
100 75 230 175 15 UNIT V A W ˚C mΩ
PINNING - SOT404
PIN 1 2 3 mb gate drain (no connection possible...