BUK9675-100A
N-channel TrenchMOS logic level FET
18 August 2015
Product data sheet
1.
General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
2.
Features and benefits
• AEC Q101 compliant • Low conduction losses due to low on-state resistance
3.
Applications
• Automotive and general purpose power switching
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source
voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 100 V
ID
drain current...