INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL58B
DESCRIPTION ·Collector–Emitter Sustaining
Voltage
: VCEO(SUS) = 100V(Min.
) ·Collector Saturation
Voltage
: VCE(sat) = 0.
2V(Max) @ IC= 1A ·High Speed Switching
APPLICATIONS ·Designed for use in electronic ballast applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
250 V
VCEO Collector-Emitter
Voltage
100 V
VEBO Emitter-Base
Voltage
10 V
IC Collector Current-Continuous
12 A
ICM Collector Current-peak
17 A
IB Base Current-Continuous
PC
Collector Power Dissipation TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
4A 50 W 1...