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Part Number
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BUL642D2 |
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Manufacturer
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ON Semiconductor |
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Description
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High Gain Bipolar NPN Transistor |
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Published
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Aug 1, 2010 |
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Detailed Description
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www.DataSheet4U.com
BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−i...
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Datasheet
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BUL642D2
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Overview
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DataSheet4U.
com
BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network
The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor (H2BIP).
Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application.
A new development process brings avalanche energy capability, making the device extremely rugged.
Features
http://onsemi.
com
3 AMPERES 825 VOLTS 75 WATTS POWER TRANSISTOR
• Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V • Extremely Low Storage Time Min/Max Guarantees Due to the...
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