isc Silicon NPN Power Transistor
DESCRIPTION ·High current ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBS
Collector-Emitter
Voltage (VBE= 0)
500
V
VCEO
Collector-Emitter
Voltage
250
V
VEBO
Emitter-Base
Voltage
7.
0
V
IC
Collector Current-Continuous
60
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
70
A
180
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
...