isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation
Voltage-
: VCE(sat)= 1.
2V (Max.
)@IC= 4A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in switching and linear applications in
military and industrial equipment.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEO VCEX VCBO
Collector-Emitter
Voltage
Collector-Emitter
Voltage VBE= -1.
5V
Collector-Base
Voltage
VEBO
Emitter-Base
Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range...