isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83
·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as high-speed power switch at high
voltage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BUX82
800
VCES
Collector-Emitter
Voltage
V
BUX83
1000
BUX82
400
VCEO
Collector-Emitter
Voltage
V
BUX83
450
VCER
Collector-Emitter
Voltage RBE= 50Ω
BUX82 BUX83
500 500
V
VEBO
Emitter-Base
Voltage
10
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Contin...