isc Silicon NPN Power Transistor
BUY18S
DESCRIPTION
·
·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 200V(MIN)
·Low Collector Saturation
Voltage-
: VCE(sat)= 1.
0V@ IC= 5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use switching and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base
Voltage
400
V
VCEO
Collector-Emitter
Voltage
200
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC＜75℃
Tj
Junction Temperature
7
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHAR...