BZX85B.
.
.
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D
Sharp edge in reverse characteristics Low reverse current Low noise Very high stability
Applications
94 9369
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Junction temperature Storage temperature range Test Conditions l=4mm, TL=25°C Type Symbol PV Tj Tstg Value 1.
3 175 –65.
.
.
+175 Unit W °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 110 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward
voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1 Unit V
Document Number 85607 Rev.
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