FQP11N50CF/FQPF11N50CF 500V N-Channel
MOSFET
July 2005
FRFET
FQP11N50CF/FQPF11N50CF
500V N-Channel
MOSFET
Features
• 11A, 500V, RDS(on) = 0.
55Ω @VGS = 10 V • Low Gate Charge (typical 43 nC) • Low Crss (typical 20pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • Fast Recovery Body Diode (typical 90ns)
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices ar...