Power Transistors
2SC2258
Silicon NPN triple diffusion planar type
For high breakdown
voltage general amplification
8.
0+–00.
.
15
Unit: mm
3.
2±0.
2
■ Features
φ 3.
16±0.
1
3.
8±0.
3 11.
0±0.
5
• High collector-emitter
voltage (Base open) VCEO
3.
05±0.
1
• High transition frequency fT
• TO-126B package which requires no insulation plate for installation to the heat sink
1.
9±0.
1 16.
0±1.
0
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base
voltage (Emitter open) VCBO
250
V
pe) Collector-emitter
voltage (Base open) VCEO
250
V
nc d ge.
ed ty Emitter-base
voltage (Collector open) VEBO
7
V
sta tinu Collector current
IC
100
mA
a e cle con Peak colle...