| Part Number | C3279 |
| Manufacturer | Toshiba Semiconductor |
| Title | 2SC3279 |
| Description | 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications · High ... |
| Features |
se breakdown voltage Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (1) DC current gain (Note 2) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 30 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0... |
| Published | May 5, 2014 |
| Datasheet |
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