DATA SHEET
SILICON POWER TRANSISTOR
2SC3518-Z
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.
FEATURES
• High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.
09 V TYP.
• Complement to 2SA1385-Z
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base
Voltage
VCBO
Collector to Emitter
Voltage
VCEO
Emitter to Base
Voltage
VEBO
Collector Current (DC) Collector Current (pulse) Note 1 Total Power Dissipation (TA = 25°C) Note 2
IC(DC) IC(pulse)
PT
Junction Temperature
Tj
Storage Temperature
Tstg
60 60 7 5 7 2.
0 150 −55 to +150
V V V A A W °C °C
R PACKAGE DR...