TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3671
Strobe Flash Applications Medium Power Amplifier Applications
2SC3671
Unit: mm
• High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.
5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)
• Low saturation
voltage: VCE (sat) = 1.
0 V (max) (IC = 4 A, IB = 0.
1 A) • High collector power dissipation
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
DC
Pulse (Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IC
ICP
IB...