INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3783
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 800V(Min) ·High Switching Speed
APPLICATIONS ·High speed and high
voltage switching applications.
·Switching regulator applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
900 V
VCEO
Collector-Emitter
Voltage
800 V
VEBO
Emitter-Base
voltage
7V
IC Collector Current-Continuous 5 A
ICM Collector Current-Pulse
7A
IB Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature...