2SC3890
Silicon NPN Triple Diffused Planar Transistor (High
Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3890 500 400 10 7(Pulse14) 2 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F)
4.
0±0.
2 10.
1±0.
2 4.
2±0.
2 2.
8 c0.
5
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.
6A IC=3A, IB=0.
6A VCE=12V, IE=–0.
5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.
5max 1.
3max 10typ 50typ
(Ta=25°C) 2SC3890 Unit
µA
V V V MHz pF
13.
0min 16.
9±0.
3 8.
4...