Transistors
2SC3931
Silicon NPN epitaxial planar type
For high-frequency amplification
0.
3+–00.
.
01
Unit: mm
0.
15+–00.
.
0150
(0.
425)
■ Features
3
1.
25±0.
10 2.
1±0.
1 5˚
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
1
2
(0.
65) (0.
65)
0.
2±0.
1
/ ■ Absolute Maximum Ratings Ta = 25°C
1.
3±0.
1 2.
0±0.
2
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base
voltage (Emitter open) VCBO
30
V
c e.
d ty Collector-emitter
voltage (Base open) VCEO
20
0 to 0.
1 0.
9±0.
1 0.
9–+00.
.
12
V
n d stag tinue Emitter-base
voltage (Collector open) VEBO
3
V
a...