C3M0015065K
Silicon Carbide Power
MOSFET C3MTM
MOSFET Technology N-Channel Enhancement Mode
Features
• C3MTM SiC
MOSFET technology • Optimized package with separate driver source pin • 8 mm of creepage distance between drain and source • High blocking
voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant
TO 247-4
Drain (Pin 1, TAB)
Gate (Pin 4)
Driver Source (Pin 3)
Power Source (Pin 2)
Package Types: TO-247-4 PN’s: C3M0015065K
Wolfspeed, Inc.
is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc.
to Wolfspeed, Inc.
D...