C3M0120100J
Silicon Carbide Power
MOSFET C3MTM
MOSFET Technology
N-Channel Enhancement Mode TAB Drain
Drain (TAB)
Features
• C3MTM SiC
MOSFET technology • Low parasitic inductance with separate driver source pin • 7mm of creepage distance between drain and source • High blocking
voltage with low On-resistance • Fast intrinsic diode with low reverse recovery (Qrr) • Low output capacitance (60pF) • Halogen free, RoHS compliant
1234567 G KS S S S S S
Part Number
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
Package
Marking
C3M0120100J
TO 263-7
C3M0120100J
Wolfspeed, Inc.
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